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HiDep
PLASMA-ENHANCED CVD
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HARDWARE
SPECIFICATIONS  |
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The
HiDep™ System
from BMR Technology opens a new horizon for plasma-enhanced chemical
vapor deposition (PECVD). BMR's new high quality dielectric films at
temperatures below 100 with high
deposition rates based on BMR's patented Hybrid Electromagnetic Energy
Coupling technology (US Patent 6310577 B). Conventional PECVD Processes typically need operating temperatures in
excess of 400 to produce
films with the viable deposition rates. In typically PECVD systems, as
the morphology and integrity also decrease rapidly due to pinholes. BMR's
HiDep™ generates highly dissociated plasmas by using time-varying magnetic
fields excited by a specially designed antenna array at radio frequency
(RF). |
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This proprietary antenna array provides the
HiDep™ plasma with
high power efficiency over a wide range of operating pressure and power
settings. A special magnetic field is localized at the chamber
circumference to further enhance electron confinement and hence
deposition properties. Additional RF power can be applied both to the top electrode and to the
wafer chuck. These additional RF powers are useful in controlling film
characteristics such as used for an effective chamber cleaning process. Process gases are introduced through top and side gas injectors with an
embedded gas diffuser to ensure an advanced uniform gas flow. |
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DIELECTRIC FILMS BELOW 100oC |
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The highly dissociated plasmas of HiDep™
significantly lower required process temperature for excellent quality
dielectric films such as SIO2 and Si3N4
— below 100oC. This capability enables
dielectric film deposition on temperature sensitive materials, including
polymers.
A Si3N4 film deposited at 50oC
shows wet etch rate by BOE comparable to the films deposited typically
at 400 via conventional PECVD methods. |
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MODULAR HARDWARE DESIGN |
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HiDep™
is designed in a modular fashion making the transitions easy from
initial process development to pilot line and onto mass production.
The extensive engineering experience of BMR;s technical team in
semiconductor equipment industry makes the
HiDep™ a system
systematically designed for highly reliable operation.
The HiDep™
system provides many process advancements to meet your toughest film
requirements not previously possible in the conventional system. |
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APPLICATIONS |
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The
capability of depositing dielectric films at substantially low
temperature with excellent quality opens a new application of plasma CVD
films, including a wide array of microelectronic devices:
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GaAs, Inp Semiconductors |
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MEMS |
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Hard disk drive head |
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LED |
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Optical Fiber |
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Solar Cells |
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Small Graphic Displays |
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GOOD QUALITY
DIELECTRIC FILMS BELOW 100oC |
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HiDep™'s
substantially lower process temperature enables deposition of dielectric
films on extremely temperature sensitive substrates such as plastic,
polymers, magnetic and compound semiconductor materials. |
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CONTROL OF CONFORMALITY |
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Conformality of films can be controlled by adjusting the energy of ions
bombarding the substrate surface. The film can be deposited either
conformally, or directionally, depending on the process requirements.
Fig. 1 shows Si3N4 film can be
deposited either conformally (Fig.-1.a) or directionally (Fig.-1.b). |
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PIN HOLE FREE FILMS |
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EASY STRESS CONTROL |
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Even with low process temperature,
HiDep™ exhibits
exceptionally low pin hole density compared to conventional PECVD
processes. |
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With the HiDep™,
targeted film stresses can be easily controlled by: a) controlling ion
energy, and b) adjusting wafer height from the plasma. While increasing
the energy of ions tend to make films more compressive, increasing gap
distance between bottom and top electrode makes the film more tensile.
BMR's technology allows adjustment of ion energy and wafer height; while
the HiDep™
deposited dielectric films have the desired minimal stress. |
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LOW HYDROGEN CONCENTRATION |
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Hydrogen content of dielectric films can be substantially lower than
that of conventional PECVD process |
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IMPROVED DEVICE PERFORMANCE |
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HiDep™'s
capability of depositing excellent quality films provides overall
improvement of device parameters. For instance, the breakdown voltage
(BV) in PHEMPT devices show 2X higher breakdown voltage with a 150
HiDep™ process
compared to films deposited by PECVD at 250 .
(Fig.-2). |
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(click on picture, lo enlarge)   |
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GAP FILLING |
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The
capability of controlling ion energy with the
HiDep™ system enables
filing of high aspect ratio gaps which has not been possible with
conventional PECVD technology. (Fig.-3).
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(click on picture, lo enlarge)    |
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GOOD WAFER PERMEABILITY |
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Si3N4
film with thickness of 200nm deposited below 85 show water
permeability better than 10-2gm/m2 -
day at the temperature of 65 and the FH
of 100%. This excellent water permeability capability makes
HiDep™ ideal to
deposit protective film layers for multitude of electronics devices.
(Fig.-4). |
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(click on picture, lo enlarge)    |
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THICK FILM DEPOSITION |
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SUPERIOR FILM UNIFORMITY |
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Maximum film thickness that can be deposited by the conventional PECVD
is approximately 5 microns. Above that, particle becomes a progressively
more serious problem. With BMR technology, the
HiDep™ can deposit
films greater than 20micron without chamber cleaning |
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A
uniform flow pattern of injected processes gases coupled with a uniform
plasma results in superior film uniformity. Typical film thickness
uniformity over 6 inch wafer shows better than ±1% uniformity.
Refractive index results typically exhibit better than ±0.5%
uniformities. |
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